| PART |
Description |
Maker |
| MS28F016SA VS28F016SA |
16-Mbit (2 Mbit x 8) FlashFile Memory(16-M2 Mx 8) FlashFile 存储
16-Mbit (1 Mbit x 16) FlashFile Memory(16-M1 Mx 16) FlashFile 存储 16兆位兆位× 16FlashFile内存6米位米位× 16FlashFile存储器）
|
Intel Corp.
Intel, Corp.
|
| 28F008S3 28F016S3 |
3 V FlashFile Memory(3V闪速存储器)
|
Intel Corp.
|
| 28F008SA 29042908 |
5 Volt FlashFile Memory
From old datasheet system
|
Intel
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| HM530281RTT-34 HM530281RTT-45 HM530281RTT-20 HM530 |
34ns; V(cc): -1.0 to 7.0V; 1W; ; 331,776-word x 8-bit flame memory
25ns; V(cc): -1.0 to 7.0V; 1W; ; 331,776-word x 8-bit flame memory
20ns; V(cc): -1.0 to 7.0V; 1W; ; 331,776-word x 8-bit flame memory
331,776-word x 8-bit Frame Memory
|
Hitachi Semiconductor
|
| 28F008SA-L 29043505 |
8-Mbit (1-Mbit x 8) FlashFile Memory
From old datasheet system
|
Intel
|
| 28F008S |
8-MBit (1 MBit x 8) FLASHFILE Memory(8-M(1 Mx 8)闪速存储器)
|
Intel Corp.
|
| HN29WT800 29WT800 |
1048576-word ′ 8-bit / 524288-word ′ 16-bit CMOS Flash Memory
From old datasheet system
|
hitachi
|
| M5M29KE131BTP |
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY
|
Renesas Electronics Corporation.
|
| M6MGT160S2BVP M6MGB160S2BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
